À̹ÌÁö È®´ë [Photo provided by SK Hynix]
SK Hynix under its roadmap in 10-nano-range memory announced Monday that it has developed 1Y 8Gb DDR4 DRAM memory, delivering 20 percent improvement in productivity and more than 15 percent in power consumption compared to the previous-generation 1X nm counterpart.
The second-generation DRAM chip supports a data transfer rate of up to 3,200Mbps. The world¡¯s second largest chipmaker said it adopted a 4-Phase Clocking design which doubles the clock signal to boost data transfer speed and stability. The second largest DRAM maker along with its bigger rival Samsung Electronics are ahead in next-gen chipmaking with SK Hynix already engaged in 1Z DRAM exploration.
SK Hynix also introduced its independently developed Sense Amp Control technology to lower power consumption and data errors, while enhancing the performance of the sense amplifier.
SK Hynix said it improved the transistor structure to lower the possibility of data errors which can occur more easily when the chip size gets smaller. The company also added a low-power power supply to the circuit to prevent unnecessary power consumption.
The new DRAM chip will be shipped from the first quarter of the next year.
By Lee Sang-duk and Minu Kim
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