Samsung Electronics Co.,, a dominant leader in both volatile and nonvolatile memory, on Thursday that it has ramped up production of 64-layer 256Gb (gigabit per second) V-NAND flash memory to meet consumer demand for superfast and super-performing storage to power mobile devices and PCs with a goal to make it its mainstream flash within the year.

Samsung, which accounts for 35.4 percent of the global flash market, in January began mass-production of the fourth-generation flash that is four time faster than a typical nanometer memory and beats its own 48-layer 256Gb V-NAND by 1.5 times to power solid-state drives for corporate clients. It was bumping up the production for supplies to consumers.

It will roll out versions for embedded Universal Flash Storage for mobile and external memory cards later this year so that the 64-layer chips would make up more than 50 percent of its monthly NAND output by the end of the year, it said in a statement. The second flash leader Toshiba has not begun 64-layer VNAND supply and SK Hynix will release its new-generation version this year.

The 64-layer V-NAND chip shows over a 30 percent gain in speed, productivity, and energy efficiency thanks to the adoption of three key technologies, Samsung explained.

The 64-layer V-NAND is currently made at its fab in Hwaseong, Gyeonggi Province and will also be turned out from the new fab in Pyeongtaek which would be operational from next month.

Shares of Samsung Electronics closed Thursday 0.71 percent or 16,000 won up at 2,284,000 won.

By Lee Dong-in

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